III-V Nanowire MOSFETs : RF-Properties and Applications
III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-