Impact of bismuth incorporation into (Ga,Mn)As thin films on their structural and magnetic properties
Structural and magnetic properties of thin films of the (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. High-resolution X-ray diffraction has been applied to characterize the structural quality and misfit strain in the films. Ferromagnetic Curie temperature and magnetocrystalline aniso