Coherently strained and dislocation-free architectured AlGaN/GaN submicron-sized structures
To improve the performance and efficiency of Al containing III-Nitride-based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the dislocations are growth on non-native substrates and heteroepitaxial growth of lattice-mismatched layers. We demonstrate the ability to completely avoid structural def